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absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 3.7 i d @ v gs = 12v, t c = 100c continuous drain current 2.4 i dm pulsed drain current 14.8 p d @ t c = 25c max. power dissipation 40 w linear derating factor 0.32 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 34 mj i ar avalanche current 3.7 a e ar repetitive avalanche energy 4.0 mj dv/dt peak diode recovery dv/dt 3.7 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.25 (typical) g c a www.irf.com 1 for footnotes refer to the last page pre-irradiation smd-0.2 (metal lid) radiation hardened IRHNM57214SEpower mosfet 250v, n-channel surface mount (smd-0.2) technology international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applicationssuch as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight product summary part number radiation level r ds(on) i d IRHNM57214SE 100k rads (si) 1.7 ? 2.4a pd-97818 downloaded from: http:///
2 www.irf.com pre-irradiation IRHNM57214SE source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 3.7 i sm pulse source current (body diode) 14.8 v sd diode forward voltage 1.0 v t j = 25c, i s = 3.7a, v gs = 0v t rr reverse recovery time 145 ns t j = 25c, i f = 3.7a, di/dt 100a/ s q rr reverse recovery charge 857 nc v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case 3.12 c/w electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.27 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 1.7 ? v gs = 12v, i d = 2.4a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma ? v gs(th) / ? t j gate threshold voltage coefficient -9.1 mv/c g fs forward transconductance 2.0 s v ds = 15v, i ds = 2.4a i dss zero gate voltage drain current 10 v ds = 200v ,v gs = 0v 2 5 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 9.1 v gs = 12v, i d = 3.7a q gs gate-to-source charge 2.9 nc v ds = 125v q gd gate-to-drain (miller) charge 4.3 t d (on) turn-on delay time 5.2 v dd = 125v, i d = 3.7a, t r rise time 2.5 v gs = 12v, r g = 7.5 ? t d (off) turn-off delay time 148 t f fall time 14 l s + l d total inductance 6.8 ciss input capacitance 308 v gs = 0v, v ds = 25v c oss output capacitance 51 pf f = 1.0mhz c rss reverse transfer capacitance 1.2 na nh ns a measured from the center of drain pad to center of source pad r g gate resistance ? f = 1.0mhz, open drain 6.6 note: corresponding spice and saber models are available on international rectifier website. downloaded from: http:///
www.irf.com 3 IRHNM57214SE pre-irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil-ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page fig a. typical single event effect, safe operating area table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter up to 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 250 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 10 a v ds = 200v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) 1.7 ? v gs = 12v, i d = 2.4a r ds(on) static drain-to-source on-state v sd diode forward voltage 1.0 v v gs = 0v, i d = 3.7a resistance (smd-0.2) 1.7 ? v gs = 12v, i d = 2.4a radiation characteristics ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 36.7 309 39.5 250 250 250 250 250 i 59.8 341 32.5 250 250 250 250 240 au 82.3 350 28.4 250 250 225 175 50 table 2. typical single event effect safe operating area 0 50 100 150 200 250 300 0 -5 -10 -15 -20 vgs vds br i au downloaded from: http:///
4 www.irf.com pre-irradiation IRHNM57214SE fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width, tj = 25c vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.0v bottom 4.5v 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width, tj =150c 4.5v vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.0v bottom 4.5v 2345678910 v gs , gate-to-source voltage (v) 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 50v 2 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 12v i d = 3.7a downloaded from: http:///
www.irf.com 5 IRHNM57214SE pre-irradiation fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 240 260 280 300 320 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 1.0ma -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 10ma 0 2 4 6 8 10 12 14 16 i d , drain current (a) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 150c v gs = 12v 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.7a t j = 25c t j = 150c downloaded from: http:///
6 www.irf.com pre-irradiation IRHNM57214SE fig 10. typical gate charge vs. gate-to-source voltage fig 9. typical capacitance vs. drain-to-source voltage fig 11. typical source-drain diode forward voltage fig 12. maximum drain current vs. case temperature 1 10 100 1000 v ds , drain-to-source voltage (v) 0 100 200 300 400 500 600 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1.0 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 0.5 1 1.5 2 2.5 3 3.5 4 i d , d r a i n c u r r e n t ( a ) 024681 01 2 q g, total gate charge (nc) 0 2 4 6 8 10 12 14 16 18 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 200v v ds = 125v v ds = 50v i d = 3.7a for test circuit see figure 17 downloaded from: http:///
www.irf.com 7 IRHNM57214SE pre-irradiation fig 15. maximum effective transient thermal impedance, junction-to-ambient fig 13. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.7a 2.3a bottom 3.7a 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100 s dc downloaded from: http:///
8 www.irf.com pre-irradiation IRHNM57214SE q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
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0.1 % + - downloaded from: http:///
www.irf.com 9 IRHNM57214SE pre-irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l =5.0mh peak i l = 3.7a, v gs = 12v i sd 3.7a, di/dt 1018a/ s, v dd 250v, t j 150c footnotes: pad assignment 1 = drain2 = gate 3 = source notes: 1. dimensioning & tolerancing per asme y14.5m-1994. 2. controlling dimension: inch. 3. dimensions are shown in millimeters [inches]. case outline and dimensions smd-0.2 (metal lid) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/2014 downloaded from: http:///

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